Sven Rogge

Professor

Professor Sven Rogge is Pro Vice-Chancellor (Research) at the University of New South Wales, Sydney (UNSW). Sven’s research interest is in condensed matter physics, in particular quantum electronics, at the School of Physics. Sven works on quantum computation in silicon in the ARC Centre for Quantum Computation and Communication Technology. In a team of enthusiastic researchers, they work on gaining atomistic insight into the interactions of quantum objects, like atoms and qubits, with their environment. This allows the team to manipulate quantum information and minimise decoherence. Before joining UNSW in 2011 Sven worked at the Kavli Institute for Quantum Nano Science at Delft University and Stanford University.

    RESEARCH

    My Research Goals

    • Control entanglement in a solid-state system, i.e. qubits
    • Study the interaction between qubits and light
    • Build and control molecular states in a solid with atomic precision

    My Research in Detail

    The goal of my research program is to understand the physics of qubit coupling with the environment to understand decoherence pathways and to control. The control over the electron wavefunction requires interface which lead to the loss of bulk properties of the qubit due to physical processes like the valley-orbit coupling, exchange, and many-body effects in coherent coupling. The atomistic understanding of the interaction between the environment and the qubit is essential for quantum computation since it allows the achievement of optimal coherence times and optimal robustness of the quantum gates. Optical addressing of electrons in Si is nontrivial but vastly beneficial due to the gained flexibility and unprecedented high resolution. We investigate efficient read-out and coupling schemes to open up new pathways into optical control.

    Current Student Projects (PhD and Honours)

    We look for enthusiastic PhD and Honours candidates for research projects. Prestigious Scholarship are available which are typically valued at $28,000 per annum with a supplement of up to $5000 per annum for first class honours or equivalent and is available for up to three-and-a-half years. The successful scholarship applicant will be expected to enrol for a PhD degree and should have an honours degree (level 1 or 2A) or equivalent, in Physics, Applied Physics, Material Science or a related subject. International applicants with a Masters degree are strongly encouraged to apply. Interested candidates should contact me to discuss possible projects and the application procedure. International applicants are very welcome! Please email an application containing a complete resume including telephone numbers, email address, and contact details of three academic referees to me. You will get a confirmation within a few days. The scholarships will remain open until filled.

    Supervision Opportunities/Areas

    There are always projects in the main research areas which focus on low temperature scanning-tunnelling spectroscopy, atomistic transport, and the interaction of light and matter at the atomic scale. We have a team of 15 enthusiastic researchers ranging from undergraduates to postdoctoral fellows. My group combines different research strengths and is very international. UNSW offers a first class laboratory and intellectual environment for atomic-scale electronics research.

    Courses I teach

    PHY3118: Quantum Physics of Solids and Devices

    Professional affiliations and service positions

    I am the Vice-President of the Australian Institute of Physics

    Book Chapters
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    Mol JA; Rogge S, 2013, 'Circuits with Single-Atom Devices', in Prati E; Shinada T (ed.), Single Atom Nanoelectronics, PAN STANFORD PUBLISHING PTE LTD, pp. 329 - 343, http://dx.doi.org/10.4032/9789814316699
    2013
    Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230, http://dx.doi.org/10.1201/b14792-10
    2013
    Tettamanzi G, 2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398, http://dx.doi.org/10.4032/9789814364034
    2012
    Tettamanzi GC; Paul A; Lee S; Klimeck G; Rogge S, 2012, 'New tools for the direct characterisation of FinFETS', in CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications, pp. 361
    2012
    Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412, http://dx.doi.org/10.4032/9789814364034
    2012
    Conference Papers
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    Van Der Heijden J; Salfi J; Mol JA; Verduijn J; Tettamanzi GC; Hamilton AR; Collaert N; Rogge S, 2015, 'Probing a single acceptor in a silicon nanotransistor', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348587
    2015
    Rossi A; Tanttu T; Tan KY; Zhao R; Chan KW; Iisakka I; Tettamanzi GC; Rogge S; Dzurak AS; Mottonen M, 2015, 'A silicon single-electron pump with tunable electrostatic confinement', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348563
    2015
    Fernandez-Gonzalvo X; Williamson LA; Chen YH; Yin C; Rogge S; Longdell JJ, 2015, 'Upconversion of microwave to optical photons using erbium impurities in a solid', in Conference on Lasers and Electro-Optics Europe - Technical Digest
    2015
    Van Der Heijden J; Tettamanzi GC; Rogge S, 2015, 'Modeling the pumping of electrons through a single dopant atom in a Si MOSFET', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, pp. 89 - 90, http://dx.doi.org/10.1109/SNW.2014.7348561
    2015
    Rossi A; Tanttu T; Tan KY; Zhao R; Chan KW; Iisakka I; Tettamanzi GC; Rogge S; Möttönen M; Dzurak AS, 2014, 'Effects of electrostatic confinement in a silicon single-electron pump', in CPEM Digest (Conference on Precision Electromagnetic Measurements), pp. 440 - 441, http://dx.doi.org/10.1109/CPEM.2014.6898448
    2014
    Tettamanzi GC; Van Der Heijden J; Rogge S, 2014, 'Charge pumping through isolated dopant atoms', in 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, pp. 298 - 300, http://dx.doi.org/10.1109/COMMAD.2014.7038716
    2014
    Tettamanzi GC; Van Der Heijden J; Rogge S, 2014, 'Charge pumping through isolated dopant atoms', in 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, pp. 298 - 300, http://dx.doi.org/10.1109/COMMAD.2014.7038716
    2014
    Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2014, 'Frequency up-conversion of microwave photons to the telecommunications band in an Er: YSO crystal', in Optics InfoBase Conference Papers
    2014
    Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2014, 'Frequency up-conversion of microwave photons to the telecommunications band in an Er: YSO crystal', in Optics InfoBase Conference Papers
    2014
    Yin CM; Rancic M; Stavrias N; de Boo GG; McCallum JC; Sellars MJ; Rogge S, 2012, 'Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor', in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings, IEEE, Piscataway, NJ, United States, pp. 197 - 198, presented at 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC., 12 December 2012 - 14 December 2012, http://dx.doi.org/10.1109/COMMAD.2012.6472428
    2012
    Tettamanzi G; Lansbergen G; Verduijn J; Rahman R; Paul A; Lee SH; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Innovative characterization techniques for ultra-scaled FinFETs', in Proceedings of the 10th IEEE International Conference on Nanotechnology, IEEE, Korea, pp. 25 - 30, presented at 10th IEEE International Conference on Nanotechnology joint Symposium with Nano Korea 2010, Korea, 17 August 2010 - 20 August 2010, http://dx.doi.org/10.1109/NANO.2010.5698069
    2010
    Nguyen HM; Van Der Drift EWJM; Caro J; Rogge S; Salemink HWM, 2010, 'Photonic crystal Mach-Zehnder interferometer operating in the self-collimation mode of light', in Adibi A; Lin SY; Scherer A (eds.), Proceedings of SPIE - The International Society for Optical Engineering, SPIE-INT SOC OPTICAL ENGINEERING, San Francisco, CA, presented at Conference on Photonic and Phononic Crystal Materials and Devices X, San Francisco, CA, 26 - 28 January 2010, http://dx.doi.org/10.1117/12.841701
    2010
    Lansbergen GP; Rahman R; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2009, '+Level spectrum of single gated as donors', in Caldas MJ; Studart N (eds.), AIP Conference Proceedings, AMER INST PHYSICS, Rio de Janeiro, BRAZIL, pp. 93 - 94, presented at 29th International Conference on Physics of Semiconductors, Rio de Janeiro, BRAZIL, 27 July - 01 August 2008, http://dx.doi.org/10.1063/1.3295570
    2009
    Lansbergen GP; Rahman R; Wellard CJ; Rutten PE; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Determination of the eigenstates and wavefunctions of a single gated As donor', in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, pp. 164 - 167, http://dx.doi.org/10.1109/ICONN.2008.4639272
    2008
    Nguyen MH; Rogge S; Caro J; van der Drift E; Salemink H, 2008, 'Mach-Zehnder interferometer based on collimation effect of photonic crystal', in Optics InfoBase Conference Papers, http://dx.doi.org/10.1364/ipnra.2008.ima5
    2008
    Lansbergen GP; Rahman R; Wellard CJ; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Transport-based dopant metrology in advanced FinFETs', in Technical Digest - International Electron Devices Meeting, IEDM, IEEE, San Francisco, CA, pp. 713 - +, presented at IEEE International Electron Devices Meeting, San Francisco, CA, 15 - 17 December 2008, http://dx.doi.org/10.1109/IEDM.2008.4796794
    2008
    Lansbergen P; Rahman R; Caro J; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Transport spectroscopy of a single atom in a FinFET', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/109/1/012003
    2008
    Lansbergen GP; Sellier H; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2007, 'One-dimensional sub-threshold channels in nanoscale triple-gate silicon transistors', in Jantsch W; Schaffler F (eds.), AIP Conference Proceedings, AMER INST PHYSICS, Vienna, AUSTRIA, pp. 1397 - 1398, presented at 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, 24 - 28 July 2006, http://dx.doi.org/10.1063/1.2730426
    2007
    Lansbergen GP; Sellier H; Collaer N; Ferain I; Jurczak M; Biesemans S; Caro J; Rogge S, 2006, 'Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs', in 2006 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY, VOLS 1 AND 2, IEEE, Brisbane, AUSTRALIA, pp. 675 - +, presented at International Conference on Nanoscience and Nanotechnology, Brisbane, AUSTRALIA, 03 July 2006 - 07 July 2006, http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000249051500174&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
    2006
    Caro J; Smit GDJ; Sellier H; Loo R; Caymax M; Rogge S; Klapwijk TM, 2005, 'Towards tunneling through a single dopant atom', in Menendez J; VanDeWalle CG (eds.), AIP Conference Proceedings, AMER INST PHYSICS, Flagstaff, AZ, pp. 1587 - 1588, presented at 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, AZ, 26 - 30 July 2004, http://dx.doi.org/10.1063/1.1994725
    2005
    Bisch C; Rogge S; Mélin T; Janssen GCAM, 2000, 'Selective aluminum CVD on Si(100) from DMAH', in Gonis A; Turchi PE A; Ardell AJ (eds.), Materials Research Society Symposium - Proceedings, MATERIALS RESEARCH SOCIETY, BOSTON, MA, pp. 141 - 146, presented at Symposium on Nucleation and Growth Processes in Materials held at the 1999 MRS Fall Meeting, BOSTON, MA, 29 November - 01 December 1999, http://dx.doi.org/10.1557/PROC-580-141
    2000
    Palasantzas G; Ilge B; Rogge S; Geerligs LJ, 1999, 'Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface', in Microelectronic Engineering, pp. 133 - 136, http://dx.doi.org/10.1016/S0167-9317(99)00035-0
    1999
    TIGNER B; SALVINO DJ; ROGGE S; OSHEROFF DD, 1992, 'LOW-TEMPERATURE HISTORY-DEPENDENT DIELECTRIC-CONSTANT IN AMORPHOUS SIO2 AND SIO1.8 FILMS', in Meissner M; Pohl RO (ed.), PHONON SCATTERING IN CONDENSED MATTER VII, SPRINGER-VERLAG BERLIN, CORNELL UNIV, ITHACA, NY, pp. 285 - 286, presented at 7th International Conference on Phonon Scattering in Condensed Matter, CORNELL UNIV, ITHACA, NY, 03 August 1992 - 07 August 1992, http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993BB68D00112&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
    1992
    Journal articles
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    Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2021, 'Isotopic enrichment of silicon by high fluence 28Si- ion implantation', Physical Review Materials, vol. 5, http://dx.doi.org/10.1103/PhysRevMaterials.5.014601
    2021
    Kobayashi T; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl HJ; Simmons MY; Rogge S, 2021, 'Engineering long spin coherence times of spin–orbit qubits in silicon', Nature Materials, vol. 20, pp. 38 - 42, http://dx.doi.org/10.1038/s41563-020-0743-3
    2021
    De Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars MJ; Rogge S, 2020, 'High-resolution spectroscopy of individual erbium ions in strong magnetic fields', Physical Review B, vol. 102, http://dx.doi.org/10.1103/PhysRevB.102.155309
    2020
    Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, vol. 11, pp. 6124, http://dx.doi.org/10.1038/s41467-020-19835-1
    2020
    Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, 'Scanned Single-Electron Probe inside a Silicon Electronic Device', ACS Nano, vol. 14, pp. 9449 - 9455, http://dx.doi.org/10.1021/acsnano.0c00736
    2020
    Bayat A; Voisin B; Buchs G; Salfi J; Rogge S; Bose S, 2020, 'Certification of spin-based quantum simulators', Physical Review A, vol. 101, http://dx.doi.org/10.1103/PhysRevA.101.052344
    2020
    Everts JR; King GGG; Lambert NJ; Kocsis S; Rogge S; Longell JJ, 2020, 'Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare-earth ion spins', Physical Review B, vol. 101, http://dx.doi.org/10.1103/PhysRevB.101.214414
    2020
    Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, 'Hole spin echo envelope modulations', Physical Review B, vol. 100, http://dx.doi.org/10.1103/PhysRevB.100.125402
    2019
    Zhang Y; Shi L; Hu D; Chen S; Xie S; Lu Y; Cao Y; Zhu Z; Jin L; Guan BO; Rogge S; Li X, 2019, 'Full-visible multifunctional aluminium metasurfaces by: In situ anisotropic thermoplasmonic laser printing', Nanoscale Horizons, vol. 4, pp. 601 - 609, http://dx.doi.org/10.1039/c9nh00003h
    2019
    Zhang Q; Hu G; De Boo GG; Rančić M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2019, 'Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors', Nano Letters, vol. 19, pp. 5025 - 5030, http://dx.doi.org/10.1021/acs.nanolett.9b01281
    2019
    van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Laviéville R; Simmons MY; Rogge S, 2018, 'Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor', Science Advances, vol. 4, pp. eaat9199, http://dx.doi.org/10.1126/sciadv.aat9199
    2018
    Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, vol. 97, http://dx.doi.org/10.1103/PhysRevB.97.195301
    2018
    Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, 'Single-Shot Single-Gate rf Spin Readout in Silicon', Physical Review X, vol. 8, http://dx.doi.org/10.1103/PhysRevX.8.041032
    2018
    Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, 'Gigahertz Single-Electron Pumping Mediated by Parasitic States', Nano Letters, vol. 18, pp. 4141 - 4147, http://dx.doi.org/10.1021/acs.nanolett.8b00874
    2018
    Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2018, 'Entanglement control and magic angles for acceptor qubits in Si', Applied Physics Letters, vol. 113, http://dx.doi.org/10.1063/1.5036521
    2018
    Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, vol. 8, http://dx.doi.org/10.1103/PhysRevX.8.031049
    2018
    Klymenko MV; Rogge S; Remacle F, 2017, 'Electronic states and valley-orbit coupling in linear and planar molecules formed by coupled P donors in silicon', Physical Review B, vol. 95, http://dx.doi.org/10.1103/PhysRevB.95.205301
    2017
    Van Der Heijden J; Tettamanzi GC; Rogge S, 2017, 'Dynamics of a single-atom electron pump', Scientific Reports, vol. 7, http://dx.doi.org/10.1038/srep44371
    2017
    Usman M; Voisin B; Salfi J; Rogge S; Hollenberg LCL, 2017, 'Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon', Nanoscale, vol. 9, pp. 17013 - 17019, http://dx.doi.org/10.1039/c7nr05081j
    2017
    Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies', ACS Nano, vol. 11, pp. 2444 - 2451, http://dx.doi.org/10.1021/acsnano.6b06362
    2017
    Fresch B; Bocquel J; Rogge S; Levine RD; Remacle F, 2017, 'A Probabilistic Finite State Logic Machine Realized Experimentally on a Single Dopant Atom', Nano Letters, vol. 17, pp. 1846 - 1852, http://dx.doi.org/10.1021/acs.nanolett.6b05149
    2017
    Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies (vol 11, pg 2444, 2017)', ACS NANO, vol. 11, pp. 3420 - 3420, http://dx.doi.org/10.1021/acsnano.6b08154
    2017
    Fresch B; Bocquel J; Hiluf D; Rogge S; Levine RD; Remacle F, 2017, 'Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon', ChemPhysChem, vol. 18, pp. 1790 - 1797, http://dx.doi.org/10.1002/cphc.201700222
    2017
    Agundez RR; Hill CD; Hollenberg LCL; Rogge S; Blaauboer M, 2017, 'Superadiabatic quantum state transfer in spin chains', Physical Review A, vol. 95, http://dx.doi.org/10.1103/PhysRevA.95.012317
    2017
    Kobayashi T; Van Der Heijden J; House MG; Hile SJ; Asshoff P; Gonzalez-Zalba MF; Vinet M; Simmons MY; Rogge S, 2016, 'Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system', Applied Physics Letters, vol. 108, http://dx.doi.org/10.1063/1.4945736
    2016
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, vol. 7, http://dx.doi.org/10.1038/ncomms11342
    2016
    Saraiva AL; Salfi J; Bocquel J; Voisin B; Rogge S; Capaz RB; Calderón MJ; Koiller B, 2016, 'Donor wave functions in Si gauged by STM images', Physical Review B, vol. 93, http://dx.doi.org/10.1103/PhysRevB.93.045303
    2016
    Salfi J; Mol JA; Culcer D; Rogge S, 2016, 'Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon', Physical Review Letters, vol. 116, http://dx.doi.org/10.1103/PhysRevLett.116.246801
    2016
    House MG; Bartlett I; Pakkiam P; Koch M; Peretz E; Van Der Heijden J; Kobayashi T; Rogge S; Simmons MY, 2016, 'High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation', Physical Review Applied, vol. 6, http://dx.doi.org/10.1103/PhysRevApplied.6.044016
    2016
    Salfi J; Tong M; Rogge S; Culcer D, 2016, 'Quantum computing with acceptor spins in silicon', Nanotechnology, vol. 27, http://dx.doi.org/10.1088/0957-4484/27/24/244001
    2016
    Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, vol. 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83
    2016
    Agundez RR; Salfi J; Rogge S; Blaauboer M, 2015, 'Local Kondo temperatures in atomic chains', Physical Review B - Condensed Matter and Materials Physics, vol. 91, http://dx.doi.org/10.1103/PhysRevB.91.041117
    2015
    Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, 'Spatially resolved resonant tunneling on single atoms in silicon', Journal of Physics Condensed Matter, vol. 27, http://dx.doi.org/10.1088/0953-8984/27/15/154203
    2015
    Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2015, 'Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal', Physical Review A - Atomic, Molecular, and Optical Physics, vol. 92, http://dx.doi.org/10.1103/PhysRevA.92.062313
    2015
    Schofield SR; Rogge S, 2015, 'Single dopants in semiconductors', Journal of Physics Condensed Matter, vol. 27, http://dx.doi.org/10.1088/0953-8984/27/15/150301
    2015
    Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, 'Radio frequency reflectometry and charge sensing of a precision placed donor in silicon', Applied Physics Letters, vol. 107, http://dx.doi.org/10.1063/1.4929827
    2015
    Klymenko MV; Rogge S; Remacle F, 2015, 'Multivalley envelope function equations and effective potentials for phosphorus impurity in silicon', Physical Review B - Condensed Matter and Materials Physics, vol. 92, http://dx.doi.org/10.1103/PhysRevB.92.195302
    2015
    Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, vol. 106, http://dx.doi.org/10.1063/1.4921640
    2015
    Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, vol. 91, http://dx.doi.org/10.1103/PhysRevB.91.245209
    2015
    Purches WE; Rossi A; Zhao R; Kafanov S; Duty TL; Dzurak AS; Rogge S; Tettamanzi GC, 2015, 'A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures', Applied Physics Letters, vol. 107, http://dx.doi.org/10.1063/1.4928589
    2015
    Hill CD; Peretz E; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY; Hollenberg LCL, 2015, 'Quantum Computing: A surface code quantum computer in silicon', Science Advances, vol. 1, http://dx.doi.org/10.1126/sciadv.1500707
    2015
    Urdampilleta M; Chatterjee A; Lo CC; Kobayashi T; Mansir J; Barraud S; Betz AC; Rogge S; Gonzalez-Zalba MF; Morton JJL, 2015, 'Charge dynamics and spin blockade in a hybrid double quantum dot in silicon', Physical Review X, vol. 5, http://dx.doi.org/10.1103/PhysRevX.5.031024
    2015
    Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2015, 'Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory', Journal of Physics Condensed Matter, vol. 27, http://dx.doi.org/10.1088/0953-8984/27/15/154207
    2015
    House MG; Kobayashi T; Weber B; Hile SJ; Watson TF; Van Der Heijden J; Rogge S; Simmons MY, 2015, 'Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots', Nature Communications, vol. 6, http://dx.doi.org/10.1038/ncomms9848
    2015
    Tettamanzi GC; Wacquez R; Rogge S, 2014, 'Charge pumping through a single donor atom', New Journal of Physics, vol. 16, http://dx.doi.org/10.1088/1367-2630/16/6/063036
    2014
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, vol. 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941
    2014
    Verduijn J; Vinet M; Rogge S, 2014, 'Radio-frequency dispersive detection of donor atoms in a field-effect transistor', Applied Physics Letters, vol. 104, pp. 102107-1 - 102107-4, http://dx.doi.org/10.1063/1.4868423
    2014
    Van Der Heijden J; Salfi J; Mol JA; Verduijn J; Tettamanzi GC; Hamilton AR; Collaert N; Rogge S, 2014, 'Probing the spin states of a single acceptor atom', Nano Letters, vol. 14, pp. 1492 - 1496, http://dx.doi.org/10.1021/nl4047015
    2014
    Rossi A; Tanttu T; Tan KY; Iisakka I; Zhao R; Chan KW; Tettamanzi GC; Rogge S; Dzurak AS; Möttönen M, 2014, 'An accurate single-electron pump based on a highly tunable silicon quantum dot', Nano Letters, vol. 14, pp. 3405 - 3411, http://dx.doi.org/10.1021/nl500927q
    2014
    Verduijn A; Agundez RR; Blaauboer M; Rogge S, 2013, 'Non-local coupling of two donor-bound electrons', New Journal of Physics, vol. 15, http://dx.doi.org/10.1088/1367-2630/15/3/033020
    2013
    Verduijn A; Tettamanzi G; Rogge S, 2013, 'Wave function control over a single donor atom', Nano Letters, vol. 14, pp. 1476 - 1480, http://dx.doi.org/10.1021/nl304518v
    2013
    Agundez RR; Verduijn J; Rogge S; Blaauboer M, 2013, 'Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system', Physical Review B, vol. 87, pp. Article number235407, http://dx.doi.org/10.1103/PhysRevB.87.235407
    2013
    Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2013, 'Silicon Quantum Electronics', Reviews of Modern Physics, vol. 85, pp. 961 - 1019, http://dx.doi.org/10.1103/RevModPhys.85.961
    2013
    Simmons MY; Miwa JA; Mol J; Rogge S; Salfi J, 2013, 'Transport through a single donor in p-type silicon', Applied Physics Letters, vol. 103, pp. 043106, http://dx.doi.org/10.1063/1.4816439
    2013
    Yin CM; Rancic M; de Boo GG; Stavrias N; McCallum JC; Sellars MJ; Rogge S, 2013, 'Optical addressing of an individual erbium ion in silicon', Nature, vol. 497, pp. 91 - 94, http://dx.doi.org/10.1038/nature12081
    2013
    Tettamanzi G, 2013, 'Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade (vol 107, 136602, 2011)', Physical Review Letters, vol. 110, pp. 49901 - 049901, http://dx.doi.org/10.1103/PhysRevLett.110.049901
    2013
    Rogge S; Sellars MJ, 2013, 'Quantum computing: Atomic clocks in the solid state', Nature Nanotechnology, vol. 8, pp. 544 - 545, http://dx.doi.org/10.1038/nnano.2013.152
    2013
    Simmons MY; Miwa JA; Rogge S; Mol J; Salfi J, 2013, 'Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants', Physical Review B, vol. 87, pp. 245417, http://dx.doi.org/10.1103/PhysRevB.87.245417
    2013
    Collini E; Levine RD; Remacle F; Rogge S; Willner I, 2013, 'Multi project: Multi-valued and parallel molecular logic', International Journal of Unconventional Computing, vol. 8, pp. 307 - 312
    2013
    Paul A; Tettamanzi G; Lee S; Mehrotra SR; Collaert N; Biesemans S; Rogge S; Klimeck , 2012, 'Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs', Journal of Applied Physics, vol. 110, pp. 124507 - 124516, http://dx.doi.org/10.1063/1.3660697
    2012
    Prati E; De Michielis M; Belli M; Cocco S; Fanciulli M; Kotekar-Patil D; Ruoff M; Kern DP; Wharam DA; Verduijn JA; Tettamanzi G; Rogge S; Roche B; Wacquez R; Jehl X; Vinet M; Sanquer M, 2012, 'Few electron limit of n-type metal oxide semiconductor single electron transistors', Nanotechnology, vol. 23, pp. 215204-1 - 215204-5, http://dx.doi.org/10.1088/0957-4484/23/21/215204
    2012
    Fresch B; Verduijn A; Mol J; Rogge S; Remacle F, 2012, 'Querying a quasi-classical Oracle: One-bit function identification problem implemented in a single atom transistor', Europhysics Letters, vol. 99, pp. 28004-1 - 28004-6, http://dx.doi.org/10.1209/0295-5075/99/28004
    2012
    Tettamanzi G; Verduijn JA; Lansbergen G; Blaauboer M; Calderon M; Aquado R; Rogge S, 2012, 'Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor', Physical Review Letters, vol. 108, pp. 46803 - 046807, http://dx.doi.org/10.1103/PhysRevLett.108.046803
    2012
    Mol J; Van der heijden J; Verduijn JA; Klein M; Remacle F; Rogge S, 2011, 'Balanced ternary addition using a gated silicon nanowire', Applied Physics Letters, vol. 99, pp. 263109-1 - 263109-3, http://dx.doi.org/10.1063/1.3669536
    2011
    Jehl X; Roche B; Sanquer M; Voisin B; Wacquez R; Deshpande V; Previtali B; Vinet M; Verduijn J; Tettamanzi GC; Rogge S; Kotekar-Patil D; Ruoff M; Kern D; Wharam DA; Belli M; Prati E; Fanciulli M, 2011, 'Mass production of silicon MOS-SETs: Can we live with nano-devices' variability?', Procedia Computer Science, vol. 7, pp. 266 - 268, http://dx.doi.org/10.1016/j.procs.2011.09.016
    2011
    Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, 'Erratum: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon (Physical Review B - Condensed Matter and Materials Physics (2011) 83 (195323))', Physical Review B - Condensed Matter and Materials Physics, vol. 83, http://dx.doi.org/10.1103/PhysRevB.83.239904
    2011
    Rahman ; Lansbergen ; Verduijn A; Tettamanzi G; Park ; Collaert ; Biesemans ; Klimeck ; Hollenberg ; Rogge S, 2011, 'Electric field reduced charging energies and two-electron bound excited states of single donors in silicon', Physical Review B, vol. 84, pp. 115458-1 - 115458-7, http://dx.doi.org/10.1103/PhysRevB.84.115428
    2011
    Mol J; Verduijn A; Levine RD; Remacle F; Rogge S, 2011, 'Integrated logic circuits using single-atom transistors', Proceedings of the National Academy of Sciences of the United States of America, vol. 108, pp. 13969 - 13972, http://dx.doi.org/10.1073/pnas.1109935108
    2011
    Tettamanzi G; Paul A; Lee SH; Mehrotra S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2011, 'Interface trap density metrology of state-of-the-art undoped Si n-FinFETs', IEEE Electron Device Letters, vol. 32, pp. 440 - 442, http://dx.doi.org/10.1109/LED.2011.2106150
    2011
    Rahman R; Verduijn JA; Kharche N; Lansbergen G; Klimeck ; Hollenberg ; Rogge S, 2011, 'Engineered valley-orbit splittings in quantum-confined nanostructures in silicon', Physical Review B, vol. 83, pp. 195323-1 - 195323-5, http://dx.doi.org/10.1103/PhysRevB.83.195323
    2011
    Lansbergen G; Rahman R; Verduijn A; Tettamanzi G; Collaert N; Biesemans S; Klimeck G; Rogge S; Hollenberg L, 2011, 'Lifetime-enhanced transport in silicon due to spin and valley blockade', Physical Review Letters, vol. 107, pp. 136602-1 - 136602-5, http://dx.doi.org/10.1103/PhysRevLett.107.136602
    2011
    Gasseller M; Deninno M; Loo R; Harrison JF; Caymax M; Rogge S; Tessmer SH, 2011, 'Single-electron capacitance spectroscopy of individual dopants in silicon', Nano Letters, vol. 11, pp. 5208 - 5212, http://dx.doi.org/10.1021/nl2025163
    2011
    Tung BT; Nguyen HM; Dao DV; Rogge S; Salemink HWM; Sugiyama S, 2011, 'Strain sensitive effect in a triangular lattice photonic crystal hole-modified nanocavity', IEEE Sensors Journal, vol. 11, pp. 2657 - 2663, http://dx.doi.org/10.1109/JSEN.2011.2157122
    2011
    Tettamanzi G; Paul A; Lansbergen G; Verduijn J; Lee S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Thermionic emission as a tool to study transport in undoped nFinFETs', IEEE Electron Device Letters, vol. 31, pp. 150 - 152, http://dx.doi.org/10.1109/LED.2009.2036134
    2010
    Rogge S, 2010, 'Nanoelectronics: Single dopants learn their place', Nature Nanotechnology, vol. 5, pp. 100 - 101, http://dx.doi.org/10.1038/nnano.2010.11
    2010
    Nguyen HM; Dundar MA; Van der heijden RW; Van der drift EWJM; Salemink HWM; Rogge S; Caro J, 2010, 'Compact Mach-Zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics Express, vol. 18, pp. 6437 - 6446, http://dx.doi.org/10.1364/OE.18.006437
    2010
    Mol JA; Beentjes SPC; Rogge S, 2010, 'A low temperature surface preparation method for STM nano-lithography on Si(100)', Applied Surface Science, vol. 256, pp. 5042 - 5045, http://dx.doi.org/10.1016/j.apsusc.2010.03.052
    2010
    Johnson BC; Tettamanzi G; Alves A; Thompson S; Yang C; Verduijn J; Mol JA; Wacquez R; Vinet M; Sanquer M; Rogge S; Jamieson DN, 2010, 'Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation', Applied Physics Letters, vol. 96, pp. 264102-1 - 264102-3, http://dx.doi.org/10.1063/1.3458783
    2010
    Calderon M; Verduijn J; Lansbergen G; Tettamanzi G; Rogge S; Koiller B, 2010, 'Heterointerface effects on the charging energy of the shallow D− ground state in silicon: Role of dielectric mismatch', Physical Review - Section B - Condensed Matter, vol. 82, pp. 075317-1 - 075317-7, http://dx.doi.org/10.1103/PhysRevB.82.075317
    2010
    Klein M; Mol JA; Verduijn J; Lansbergen G; Rogge S; Levine RD; Remacle F, 2010, 'Ternary logic implemented on a single dopant atom field effect silicon transistor', Applied Physics Letters, vol. 96, pp. 043107, http://dx.doi.org/10.1063/1.3297906
    2010
    Yan Y; Mol JA; Verduijn J; Rogge S; Levine RD; Remacle F, 2010, 'Electrically addressing a molecule-like donor pair in silicon: An atomic scale cyclable full Adder logic', Journal of Physical Chemistry C, vol. 114, pp. 20380 - 20386, http://dx.doi.org/10.1021/jp103524d
    2010
    Tung BT; Dao DV; Susumu S; Nguyen HM; Rogge S; Salemink HWM, 2010, 'Strain sensitivity of a modified single-defect photonic crystal nanocavity for mechanical sensing', Proceedings of IEEE Sensors, pp. 2585 - 2588, http://dx.doi.org/10.1109/ICSENS.2010.5690169
    2010
    Tettamanzi GC; Lansbergen GP; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2010, 'A novel Kondo effect in single atom transistors', ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, pp. 319 - 321, http://dx.doi.org/10.1109/ICONN.2010.6045240
    2010
    Tettamanzi G; Lansbergen G; Paul A; Lee S; Deosarran P; Collaert N; Biesemans S; Rogge S, 2010, 'Sub-threshold study of undoped trigate nFinFET', Thin Solid Films, vol. 518, pp. 2521 - 2523, http://dx.doi.org/10.1016/j.tsf.2009.10.114
    2010
    Nguyen HM; Dundar MA; van der Heijden RW; van der Drift EWJM; Salemink HWM; Rogge S; Caro J, 2010, 'Compact mach-zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics InfoBase Conference Papers
    2010
    Verduijn J; Tettamanzi G; Lansbergen G; Collaert N; Biesemans S; Rogge S, 2010, 'Coherent transport through a double donor system in silicon', Applied Physics Letters, vol. 96, pp. 072110-1 - 072110-3, http://dx.doi.org/10.1063/1.3318271
    2010
    Lansbergen G; Tettamanzi G; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2010, 'Tunable Kondo effect in a single donor atom', Nano Letters, vol. 10, pp. 455 - 460, http://dx.doi.org/10.1021/nl9031132
    2010
    Klein M; Lansbergen G; Mol JA; Rogge S; Levine RD; Remacle F, 2009, 'Reconfigurable Logic Devices on a Single Dopant Atom—Operation up to a Full Adder by Using Electrical Spectroscopy', Chemphyschem, vol. 10, pp. 162 - 173, http://dx.doi.org/10.1002/cphc.200800568
    2009
    Craciun MF; Giovannetti G; Rogge S; Brocks G; Morpurgo AF; van den Brink J, 2009, 'Evidence for the formation of a Mott state in potassium-intercalated pentacene', Physical Review - Section B - Condensed Matter, vol. 79, pp. 125116-1 - 125116-8, http://dx.doi.org/10.1103/PhysRevB.79.125116
    2009
    Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg L, 2009, 'Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors', Physical Review - Section B - Condensed Matter, vol. 80, pp. 155301-1 - 155301-5, http://dx.doi.org/10.1103/PhysRevB.80.155301
    2009
    Rahman R; Lansbergen G; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg L, 2009, 'Orbital Stark effect and quantum confinement transition of donors in silicon', Physical Review - Section B - Condensed Matter, vol. 80, pp. 165314-1 - 165314-10, http://dx.doi.org/10.1103/PhysRevB.80.165314
    2009
    Lansbergen G; Rahman R; Wellard C; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Atomistic understanding of a single gated dopant atom in a MOSFET', Materials Research Society Symposium Proceedings, vol. 1067, pp. 12 - 17, http://dx.doi.org/10.1557/proc-1067-b03-07
    2008
    Lansbergen GP; Rahman R; Wellard CJ; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Level spectrum of a single gated arsenic donor in a three terminal geometry', Materials Research Society Symposium Proceedings, vol. 1117, pp. 1 - 6, http://dx.doi.org/10.1557/proc-1117-j01-03
    2008
    Nguyen MH; Rogge S; Caro J; van der Drift E; Salemink H, 2008, 'Mach-Zehnder interferometer based on collimation effect of photonic crystal', Optics InfoBase Conference Papers
    2008
    Caro J; Roeling E; Rong B; Nguyen HM; Van der drift EWJM; Rogge S; Karouta F; Van der heijden RW; Salemink HWM, 2008, 'Transmission measurement of the photonic band gap of GaN photonic crystal slabs', Applied Physics Letters, vol. 93, pp. 051117-1 - 051117-3, http://dx.doi.org/10.1063/1.2967744
    2008
    Lansbergen G; Rahman R; Wellard CJ; Woo I; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET', Nature Physics, vol. 4, pp. 656 - 661, http://dx.doi.org/10.1038/nphys994
    2008
    Klein M; Rogge S; Remacle F; Levine RD, 2007, 'Transcending binary logic by gating three coupled quantum dots', Nano Letters, vol. 7, pp. 2795 - 2799, http://dx.doi.org/10.1021/nl071376e
    2007
    Snijders P; Moon E; Gonzalez C; Rogge S; Ortega J; Flores F; Weitering H, 2007, 'Controlled self-organization of atom vacancies in monatomic gallium layers', Physical Review Letters, vol. 99, pp. 116102-1 - 116102-4, http://dx.doi.org/10.1103/PhysRevLett.99.116102
    2007
    Sellier H; Lansbergen G; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2007, 'Subthreshold channels at the edges of nanoscale triple-gate silicon transistors', Applied Physics Letters, vol. 90, pp. 073502-1 - 073502-3, http://dx.doi.org/10.1063/1.2476343
    2007
    Sellier H; Lansbergen GP; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2006, 'Transport spectroscopy of a single dopant in a gated silicon nanowire', Physical Review Letters, vol. 97, http://dx.doi.org/10.1103/PhysRevLett.97.206805
    2006
    Craciun MF; Rogge S; den Boer M-JL; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2006, 'Electronic Transport through Electron-Doped Metal Phthalocyanine Materials', Advanced Materials, vol. 18, pp. 320 - 324, http://dx.doi.org/10.1002/adma.200501268
    2006
    Snijders PC; Rogge S; Weitering HH, 2006, 'Density waves in atomic necklaces', Europhysics News, vol. 37, pp. 27 - 30, http://dx.doi.org/10.1051/epn:2006506
    2006
    Snijders P; Rogge S; Weitering H, 2006, 'Competing periodicities in fractionally filled one-dimensional bands', Physical Review Letters, vol. 96, pp. 076801-1 - 076801-4, http://dx.doi.org/10.1103/PhysRevLett.96.076801
    2006
    Margadonna S; Prassides K; Iwasa Y; Taguchi Y; Craciun MF; Rogge S; Morpurgo AF, 2006, 'Potassium Phthalocyanine, KPc: One-Dimensional Molecular Stacks Bridged by K+ Ions', Inorganic Chemistry, vol. 45, pp. 10472 - 10478, http://dx.doi.org/10.1021/ic060727
    2006
    Lansbergen GP; Sellier H; Collaert N; Ferain I; Jurczak M; Biesemans S; Caro J; Rogge S, 2006, 'Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs', Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, pp. 351 - 354, http://dx.doi.org/10.1109/ICONN.2006.340624
    2006
    Craciun MF; Rogge S; Morpurgo AF, 2005, 'Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped metal-phthalocyanine compounds', Journal of the American Chemical Society, vol. 127, pp. 12210 - 12211, http://dx.doi.org/10.1021/ja054468j
    2005
    Rogge S; Snijders P; Gonzalez C; Paul S; Ortega J; Flores F; Weitering H, 2005, 'Ga-induced atom wire formation and passivation of stepped Si(112)', Physical Review - Section B - Condensed Matter, vol. 72, pp. 125343-1 - 125343-12, http://dx.doi.org/10.1103/PhysRevB.72.125343
    2005
    de Boer R; Stassen A; Craciun MF; Mulder C; Molinari A; Rogge S; Morpurgo AF, 2005, 'Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors', Applied Physics Letters, vol. 86, pp. 262109-1 - 262109-3, http://dx.doi.org/10.1063/1.1984093
    2005
    Caro J; Vink I; Smit G; Rogge S; Klapwijk T; Loo R; Caymax M, 2004, 'Direct observation by resonant tunneling of the B+ level in a delta-doped silicon barrier', Physical Review - Section B - Condensed Matter, vol. 69, pp. 125324-1 - 125324-5, http://dx.doi.org/10.1103/PhysRevB.69.125324
    2004
    Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics', Physical Review - Section B - Condensed Matter, vol. 69, pp. 035338-1 - 035338-5, http://dx.doi.org/10.1103/PhysRevB.69.035338
    2004
    Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Group-theoretical analysis of double acceptors in a magnetic field: Identification of the Si : B+ ground state', Physical Review - Section B - Condensed Matter, vol. 69, pp. 085211-1 - 085211-7, http://dx.doi.org/10.1103/PhysRevB.69.085211
    2004
    Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Stark effect in shallow impurities in Si', Physical Review - Section B - Condensed Matter, vol. 70, pp. 035206-1 - 035206-10, http://dx.doi.org/10.1103/PhysRevB.70.035206
    2004
    Gonzalez C; Snijders P; Ortega J; Perez R; Flores F; Rogge S; Weitering H, 2004, 'Formation of atom wires on vicinal silicon', Physical Review Letters, vol. 93, pp. 126106-1 - 126106-4, http://dx.doi.org/10.1103/PhysRevLett.93.126106
    2004
    Craciun MF; Rogge S; den Boer M-JL; Klapwijk T; Morpurgo AF, 2004, 'Electron transport and tunnelling spectroscopy in alkali doped metal phthalocyanines', Journal de Physique Iv, vol. 114, pp. 607 - 610, http://dx.doi.org/10.1051/jp4:2004114144
    2004
    Smit G; Rogge S; Caro J; Klapwijk T, 2003, 'Gate-induced ionization of single dopant atoms', Physical Review - Section B - Condensed Matter, vol. 68, pp. 193302-1 - 193302-4, http://dx.doi.org/10.1103/PhysRevB.68.193302
    2003
    Rogge S; Durkut M; Klapwijk TM, 2003, 'Single domain transport measurements of C-60 films', PHYSICAL REVIEW B, vol. 67, http://dx.doi.org/10.1103/PhysRevB67.033410
    2003
    Rogge S; Durkut M; Klapwijk T, 2003, 'Single domain transport measurements of C-60 films', Physical Review - Section B - Condensed Matter, vol. 67, pp. 033410-1 - 033410-4, http://dx.doi.org/10.1103/PhysRevB.67.033410
    2003
    Smit G; Flokstra M; Rogge S; Klapwijk T, 2002, 'Scaling of micro-fabricated nanometer-sized Schottky diodes', Microelectronic Engineering, vol. 64, pp. 429 - 433, http://dx.doi.org/10.1016/S0167-9317(02)00817-1
    2002
    Smit G; Rogge S; Klapwijk T, 2002, 'Enhanced tunneling across nanometer-scale metal-semiconductor interfaces', Applied Physics Letters, vol. 80, pp. 2568 - 2570, http://dx.doi.org/10.1063/1.1467980
    2002
    Smit G; Rogge S; Klapwijk T, 2002, 'Scaling of nano-Schottky-diodes', Applied Physics Letters, vol. 81, pp. 3852 - 3854, http://dx.doi.org/10.1063/1.1521251
    2002
    Rogge S; Timmerman R; Scholte P; Geerligs L; Salemink HWM, 2001, 'Field-based scanning tunneling microscope manipulation of antimony dimers on Si(001)', Journal of Vacuum Science and Technology B, vol. 19, pp. 659 - 665, http://dx.doi.org/10.1116/1.1372925
    2001
    Rogge S; Dunn A; Melin T; Dekker C; Geerligs L, 2000, 'Electrical transport through ultrathin ordered K3C60 films on Si', Carbon, vol. 38, pp. 1647 - 1651, http://dx.doi.org/10.1016/S0008-6223(00)00052-X
    2000
    Rogge S; Timmerman R; Scholte P; Geerligs L; Salemink HWM, 2000, 'Surface polymerization of epitaxial Sb wires on Si(001)', Physical Review - Section B - Condensed Matter, vol. 62, pp. 15341 - 15344, http://dx.doi.org/10.1103/PhysRevB.62.15341
    2000
    Wilken HC; Rogge S; Götze O; Werfel T; Zwirner J, 1999, 'Specific detection by flow cytometry of histidine-tagged ligands bound to their receptors using a tag-specific monoclonal antibody', Journal of Immunological Methods, vol. 226, pp. 139 - 145, http://dx.doi.org/10.1016/S0022-1759(99)00064-2
    1999
    Zuiddam M; Rogge S; Geerligs L; Van der drift EWJM; Ilge B; Palasantzas G, 1998, 'Contact and alignment marker technology for atomic scale device fabrication', Microelectronic Engineering, vol. 42, pp. 567 - 570, http://dx.doi.org/10.1016/S0167-9317(98)00133-6
    1998
    Rogge S; Natelson D; Osheroff D, 1997, 'Nonequilibrium and hysteretic low temperature dielectric response to strain in glasses', Journal of Low Temperature Physics, vol. 106, pp. 717 - 725, http://dx.doi.org/10.1007/BF02395933
    1997
    Rogge S; Natelson D; Osheroff D, 1997, 'He-3 immersion cell for ultralow temperature study of amorphous solids', Review of Scientific Instruments, vol. 68, pp. 1831 - 1834, http://dx.doi.org/10.1063/1.1148055
    1997
    Rogge S; Natelson D; Tigner B; Osheroff D, 1997, 'Nonlinear dielectric response of glasses at low temperature', Physical Review - Section B - Condensed Matter, vol. 55, pp. 11256 - 11262, http://dx.doi.org/10.1103/PhysRevB.55.11256
    1997
    Rogge S; Natelson D; Osheroff DD, 1997, '3He immersion cell for ultralow temperature study of amorphous solids', Review of Scientific Instruments, vol. 68, pp. 1831 - 1834, http://dx.doi.org/10.1063/1.1148055
    1997
    Rogge S; Natelson D; Osheroff D, 1996, 'Evidence for the importance of interactions between active defects in glasses', Physical Review Letters, vol. 76, pp. 3136 - 3139, http://dx.doi.org/10.1103/PhysRevLett.76.3136
    1996
    Osheroff D; Rogge S; Natelson D, 1996, 'Anomalous dielectric properties of amorphous solids at low temperatures', Physica B - Condensed Matter, vol. 219-220, pp. 243 - 246, http://dx.doi.org/10.1016/0921-4526(95)00708-3
    1996
    Natelson D; Rogge S; Osheroff D, 1996, 'Dielectric response of two level systems to strain fields at low temperatures', Czechoslovak Journal of Physics, vol. 46, pp. 2265 - 2266, http://dx.doi.org/10.1007/BF02571124
    1996
    Rogge S; Natelson D; Osheroff D, 1996, 'Anomalous behavior of epsilon(omega) in glasses at low temperature due to bias application', Czechoslovak Journal of Physics, vol. 46, pp. 2263 - 2264, http://dx.doi.org/10.1007/BF02571123
    1996
    Osheroff D; Rogge S; Natelson D, 1996, 'Interactions between active defects in glasses at low temperatures', Czechoslovak Journal of Physics, vol. 46, pp. 3295 - 3302, http://dx.doi.org/10.1007/BF02548143
    1996
    Rogge S; Salvino D; Tigner B; Osheroff D, 1994, 'Low temperature time and electric field dependence of the dielectric constant in amorphous materials', Physica B - Condensed Matter, vol. 194-196, pp. 407 - 408, http://dx.doi.org/10.1016/0921-4526(94)90533-9
    1994
    Salvino D; Rogge S; Tigner B; Osheroff D, 1994, 'Low Temperature ac Dielectric Response of Glasses to High dc Electric Fields', Physical Review Letters, vol. 73, pp. 268 - 271, http://dx.doi.org/10.1103/PhysRevLett.73.268
    1994
    Patents
    add
    Mol J; Rogge S; Salfi J, 2017, Quantum computing with acceptor-based qubits, Australia, Patent No. 2014234949, https://worldwide.espacenet.com/publicationDetails/biblio?CC=AU&NR=2014234949B2&KC=B2&FT=D#
    2017
    De Boo G; Mccallum J; Rancic M; Rogge S; Sellars M; Stavrias N; Yin C, 2017, Optical addressing of individual targets in solids, Patent No. 2013360022-B2, http://pericles.ipaustralia.gov.au/ols/auspat/pdfSource.do?fileQuery=%87%A0%A4%98%92%9Al%A0%A4%98%92%9AU%95%98%9B%94%9D%90%9C%94lp%84a_%60bbe__aaqaa_%60f_c_e%5D%9F%93%95U%93%9E%96l%93%9E%96
    2017
    Rogge S; Sellars MJ; Yin C; McCallum JC; De Boo GG; Rancic M; Stavrias N, 2014, Optical addressing of individual targets in solids, Patent No. WO/2014/089621, Patent Agent:FB RICE & CO, http://patentscope.wipo.int/search/en/WO2014089621
    2014

    2000 Fellow of the Royal Dutch Academy of Science (KNAW)

    2010 ARC Future Fellow (professorial level)

    2015 Distinguished Professorship (Scientia Professor) UNSW

    2015 Fellow Australian Institute of Physics (FAIP)

    2015 Fellow Royal Society of New South Wales (FRSN)

    2016 Fellow of the American Physical Society (FAPS)