Rajib Rahman

Associate Professor

I am a computational physicist who develops advanced simulation techniques to understand quantum materials and devices. My research is interdisciplinary in scope and spreads over condensed matter physics, electrical engineering, material science, and computational science. My objective is to develop future electronics and computing technologies utilizing novel quantum phenomena in condensed matter. Solid-state quantum computing is one of my active areas of research. I have developed computational tools that can simulate various aspects of semiconductor qubits such as electronic structure, response to electric and magnetic fields, many-body interactions, and spin-lattice and spin-spin interactions. I am also interested in emerging 2D and topological materials for low energy electronics. 

Preprints
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Voisin B; Salfi J; Rahman R; Rogge S, 2021, Novel characterisation of dopant-based qubits
2021
Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon
2021
Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2021, Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon
2021
Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2021, Valley interference and spin exchange at the atomic scale in silicon
2021
Gardin A; Monaghan RD; Rahman R; Tettamanzi GC, 2021, Non-adiabatic quantum control of valley states in silicon
2021
Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2021, Valley population of donor states in highly strained silicon
2021
Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2020, Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon
2020
Nakamura J; Fallahi S; Sahasrabudhe H; Rahman R; Liang S; Gardner GC; Manfra MJ, 2019, Aharonov-Bohm interference of fractional quantum Hall edge modes
2019
Mazzola F; Chen C-Y; Rahman R; Zhu X-G; Polley CM; Balasubramanian T; King PDC; Hofmann P; Miwa JA; Wells JW, 2019, The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon
2019
Sengupta P; Khandekar C; Van Mechelen T; Rahman R; Jacob Z, 2019, Electron g-factor engineering for non-reciprocal spin photonics
2019
Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, Addressable electron spin resonance using donors and donor molecules in silicon
2018
Chen C-Y; Ameen TA; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2018, Channel thickness optimization for ultra thin and 2D chemically doped TFETs
2018
Ferdous R; Chan KW; Veldhorst M; Hwang JCC; Yang CH; Klimeck G; Morello A; Dzurak AS; Rahman R, 2017, Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability
2017
Huang JZ; Long P; Povolotskyi M; Ilatikhameneh H; Ameen T; Rahman R; Rodwell MJW; Klimeck G, 2017, A Multiscale Modeling of Triple-Heterojunction Tunneling FETs
2017
Ameen TA; Ilatikhameneh H; Huang JZ; Povolotskyi M; Rahman R; Klimeck G, 2017, Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions
2017
Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2017, Two-electron states of a group V donor in silicon from atomistic full configuration interaction
2017
Ferdous R; Kawakami E; Scarlino P; Nowak MP; Ward DR; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Eriksson MA; Vandersypen LMK; Rahman R, 2017, Valley dependent anisotropic spin splitting in silicon quantum dots
2017
Ilatikhameneh H; Ameen T; Chen C; Klimeck G; Rahman R, 2017, Sensitivity Challenge of Steep Transistors
2017
Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2017, Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions
2017
Sahasrabudhe H; Novakovic B; Nakamura J; Fallahi S; Povolotskyi M; Klimeck G; Rahman R; Manfra MJ, 2017, Optimization of edge state velocity in the integer quantum Hall regime
2017
Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2017, Valley filtering and spatial maps of coupling between silicon donors and quantum dots
2017
Chen F; Ilatikhameneh H; Tan Y; Klimeck G; Rahman R, 2017, Switching Mechanism and the Scalability of vertical-TFETs
2017
Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2016, Impact of Dimensionality on PN Junctions
2016
Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2016, Design Rules for High Performance Tunnel Transistors from 2D Materials
2016
Chen FW; Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2016, Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
2016
Chen F; Ilatikhameneh H; Tan Y; Valencia D; Klimeck G; Rahman R, 2016, Transport in vertically stacked hetero-structures from 2D materials
2016
Mohiyaddin FA; Kalra R; Laucht A; Rahman R; Klimeck G; Morello A, 2016, Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions
2016
Ilatikhameneh H; Ameen T; Novakovic B; Tan Y; Klimeck G; Rahman R, 2016, Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass
2016
Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LLC, 2016, Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision
2016
Ilatikhameneh H; Ameen TA; Klimeck G; Appenzeller J; Rahman R, 2015, Dielectric Engineered Tunnel Field-Effect Transistor
2015
Ilatikhameneh H; Klimeck G; Rahman R, 2015, Can Tunnel Transistors Scale Below 10nm?
2015
Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
2015
Ilatikhameneh H; Ameen T; Klimeck G; Rahman R, 2015, Universal Behavior of Strain in Quantum Dots
2015
Ilatikhameneh H; Salazar RB; Klimeck G; Rahman R; Appenzeller J, 2015, From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling
2015
Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, Spatially resolved resonant tunneling on single atoms in silicon
2015
Rahman R; Verduijn J; Wang Y; Yin C; De Boo G; Klimeck G; Rogge S, 2015, Bulk and sub-surface donor bound excitons in silicon under electric fields
2015
Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2015, Scaling Theory of Electrically Doped 2D Transistors
2015
Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon
2015
Chen FW; Ilatikhameneh H; Klimeck G; Chen Z; Rahman R, 2015, Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
2015
Wang YE; Tankasala A; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2015, Engineering inter-qubit exchange coupling between donor bound electrons in silicon
2015
Ameen TA; Ilatikhameneh H; Klimeck G; Rahman R, 2015, Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
2015
Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2015, Spin-lattice relaxation times of single donors and donor clusters in silicon
2015
Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2015, Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon
2015
Ilatikhameneh H; Tan Y; Novakovic B; Klimeck G; Rahman R; Appenzeller J, 2015, Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials
2015
Tosi G; Mohiyaddin FA; Schmitt V; Tenberg S; Rahman R; Klimeck G; Morello A, 2015, Silicon quantum processor with robust long-distance qubit couplings
2015
Ameen T; Ilatikhameneh H; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Wenner BR; Rahman R; Klimeck G, 2015, Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots
2015
Laucht A; Muhonen JT; Mohiyaddin FA; Kalra R; Dehollain JP; Freer S; Hudson FE; Veldhorst M; Rahman R; Klimeck G; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2015, Electrically controlling single spin qubits in a continuous microwave field
2015
Salazar RB; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2015, A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations
2015
Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2014, Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
2014
Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, Spatially Resolving Valley Quantum Interference of a Donor in Silicon
2014
Pla JJ; Mohiyaddin FA; Tan KY; Dehollain JP; Rahman R; Klimeck G; Jamieson DN; Dzurak AS; Morello A, 2014, Coherent Control of a Single Silicon-29 Nuclear Spin Qubit
2014
Rahman R; Lansbergen GP; Verduijn J; Tettamanzi GC; Park SH; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2011, Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
2011
Lansbergen GP; Rahman R; Tettamanzi GC; Verduijn J; Hollenberg LCL; Klimeck G; Rogge S, 2011, Dopant metrology in advanced FinFETs
2011
Witzel WM; Rahman R; Carroll MS, 2011, SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge
2011
Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, Engineered valley-orbit splittings in quantum confined nanostructures in silicon
2011
Rahman R; Muller RP; Levy JE; Carroll MS; Klimeck G; Greentree AD; Hollenberg LCL, 2010, Coherent electron transport by adiabatic passage in an imperfect donor chain
2010
Lansbergen GP; Rahman R; Verduijn J; Tettamanzi GC; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2010, Lifetime enhanced transport in silicon due to spin and valley blockade
2010
Rahman R; Park SH; Klimeck G; Hollenberg LCL, 2009, Stark tuning of the charge states of a two-donor molecule in silicon
2009
Rahman R; Lansbergen GP; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg LCL, 2009, Orbital Stark effect and quantum confinement transition of donors in silicon
2009
Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg LCL, 2009, Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors
2009
Ahmed S; Kharche N; Rahman R; Usman M; Lee S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2009, Multimillion Atom Simulations with NEMO 3-D
2009
Park SH; Rahman R; Klimeck G; Hollenberg LCL, 2009, Mapping donor electron wave function deformations at sub-Bohr orbit resolution
2009
Rahman R; Park SH; Cole JH; Greentree AD; Muller RP; Klimeck G; Hollenberg LCL, 2009, Atomistic simulations of adiabatic coherent electron transport in triple donor systems
2009
Rahman R; Wellard CJ; Bradbury FR; Prada M; Cole JH; Klimeck G; Hollenberg LCL, 2007, High precision quantum control of single donor spins in silicon
2007
Book Chapters
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Ahmed S; Kharche N; Rahman R; Usman M; Lee S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2015, 'Multimillion Atom Simulation of Electronic and Optical Properties of Nanoscale Devices Using NEMO 3-D', in Encyclopedia of Complexity and Systems Science, Springer Berlin Heidelberg, pp. 1 - 69, http://dx.doi.org/10.1007/978-3-642-27737-5_343-2
2015
Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230, http://dx.doi.org/10.1201/b14792-10
2013
Rahman R; Hollenberg LCL; Klimeck G, 2013, 'Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon', in Prati E; Shinada T (ed.), SINGLE-ATOM NANOELECTRONICS, PAN STANFORD PUBLISHING PTE LTD, pp. 41 - 59, http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000328280800004&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
2013
2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416, http://dx.doi.org/10.1201/b13063-15
2012
Tettamanzi G, 2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398, http://dx.doi.org/10.4032/9789814364034
2012
Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412, http://dx.doi.org/10.4032/9789814364034
2012
Ahmed* S; Kharche* N; Rahman* R; Usman* M; Lee* S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2009, 'Multimillion Atom Simulations with Nemo3D', in Encyclopedia of Complexity and Systems Science, Springer New York, pp. 5745 - 5783, http://dx.doi.org/10.1007/978-0-387-30440-3_343
2009
Conference Papers
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Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Electron spin relaxation of single phosphorus donors and donor clusters in atomically engineered silicon devices', in 2017 Silicon Nanoelectronics Workshop, SNW 2017, pp. 23 - 24, http://dx.doi.org/10.23919/SNW.2017.8242278
2017
Chen F; Ilatikhameneh H; Tan Y; Valencia D; Klimeck G; Rahman R, 2017, 'Transport in vertically stacked hetero-structures from 2D materials', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/864/1/012053
2017
Nishat MRK; Tankasala A; Kharche N; Rahman R; Ahmed SS, 2017, 'Multiscale-multiphysics modeling of nonpolar InGaN LEDs', in 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017, pp. 85 - 88, http://dx.doi.org/10.1109/NANO.2017.8117449
2017
Fay P; Li W; Digiovanni D; Cao L; Ilatikhameneh H; Chen F; Ameen T; Rahman R; Klimeck G; Lund C; Keller S; Islam SM; Chaney A; Cho Y; Jena D, 2017, 'III-N heterostructure devices for low-power logic', in China Semiconductor Technology International Conference 2017, CSTIC 2017, http://dx.doi.org/10.1109/CSTIC.2017.7919743
2017
Huang JZ; Long P; Ilatikhameneh H; Ameen T; Rahman R; Povolotskyi M; Rodwell MJW; Klimeck G, 2016, 'Multiscale Transport Simulation of Nanoelectronic Devices with NEMO5', in 2016 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS), IEEE, Shanghai, PEOPLES R CHINA, pp. 914 - 914, presented at Progress in Electromagnetic Research Symposium (PIERS), Shanghai, PEOPLES R CHINA, 08 August 2016 - 11 August 2016, http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000400013900313&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
2016
Fay P; Li W; Cao L; Pourang K; Islam SM; Lund C; Saima S; Ilatikhameneh H; Amin T; Huang J; Rahman R; Jena D; Keller S; Klimeck G, 2016, 'Novel III-N heterostructure devices for low-power logic and more', in 16th International Conference on Nanotechnology - IEEE NANO 2016, pp. 767 - 769, http://dx.doi.org/10.1109/NANO.2016.7751336
2016
Long P; Huang JZ; Povolotskyi M; Verreck D; Klimeck G; Rodwell MJW, 2016, 'High-current InP-based triple heterojunction tunnel transistors', in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), IEEE, presented at 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)], 26 June 2016 - 30 June 2016, http://dx.doi.org/10.1109/iciprm.2016.7528592
2016
Long P; Povolotskyi M; Huang JZ; Ilatikhameneh H; Ameen T; Rahman R; Kubis T; Klimeck G; Rodwell MJW, 2016, 'Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors', in Device Research Conference - Conference Digest, DRC, http://dx.doi.org/10.1109/DRC.2016.7548424
2016
Ilatikhameneh H; Chen FW; Rahman R; Klimeck G, 2015, 'Electrically doped 2D material tunnel transistor', in 18th International Workshop on Computational Electronics, IWCE 2015, http://dx.doi.org/10.1109/IWCE.2015.7301966
2015
Chen FW; Ilatikhameneh H; Klimeck G; Rahman R; Chu T; Chen Z, 2015, 'Achieving a higher performance in bilayer graphene FET - Strain engineering', in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 177 - 181, http://dx.doi.org/10.1109/SISPAD.2015.7292288
2015
Tan YHM; Ryu H; Weber B; Lee S; Rahman R; Hollenberg LCL; Simmons MY; Klimeck G, 2015, 'Statistical modeling of ultra-scaled donor-based silicon phosphorus devices', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348589
2015
Weber B; Tan YHM; Mahapatra S; Watson TF; Ryu H; Lee S; Rahman R; Hollenberg LCL; Klimeck G; Simmons MY, 2015, 'Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348550
2015
Ilatikhameneh H; Rahman R; Appenzeller J; Klimeck G, 2015, 'Electrically doped WTe2 tunnel transistors', in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 270 - 272, http://dx.doi.org/10.1109/SISPAD.2015.7292311
2015
Ilatikhameneh H; Klimeck G; Rahman R, 2015, '2D tunnel transistors for ultra-low power applications: Promises and challenges', in 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings, http://dx.doi.org/10.1109/E3S.2015.7336792
2015
Ilatikhameneh H; Novakovic B; Tan Y; Salmani-Jelodar M; Kubis T; Povolotskyi M; Rahman R; Klimeck G, 2015, 'Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348606
2015
Mohiyaddin FA; Rahman R; Kalra R; Lee S; Klimeck G; Hollenberg LCL; Yang CH; Rossi A; Dzurak AS; Morello A, 2015, 'Designing a large scale quantum computer with atomistic simulations', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348565
2015
Ameen TA; Ilatikhameneh H; Valencia D; Rahman R; Klimeck G, 2015, 'Engineering the optical transitions of self-assembled quantum dots', in 18th International Workshop on Computational Electronics, IWCE 2015, http://dx.doi.org/10.1109/IWCE.2015.7301940
2015
Ameen T; Ilatikhameneh H; Charles J; Hsueh Y; Chen S; Fonseca J; Povolotskyi M; Rahman R; Klimeck G, 2014, 'Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots', in Proceedings of the IEEE Conference on Nanotechnology, pp. 921 - 924, http://dx.doi.org/10.1109/NANO.2014.6968137
2014
Neupane MR; Rahman R; Lake RK, 2011, 'Carrier leakage in Ge/Si core-shell nanocrystals for lasers: Core size and strain effects', in Proceedings of SPIE - The International Society for Optical Engineering, http://dx.doi.org/10.1117/12.894153
2011
Tettamanzi G; Lansbergen G; Verduijn J; Rahman R; Paul A; Lee SH; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Innovative characterization techniques for ultra-scaled FinFETs', in Proceedings of the 10th IEEE International Conference on Nanotechnology, IEEE, Korea, pp. 25 - 30, presented at 10th IEEE International Conference on Nanotechnology joint Symposium with Nano Korea 2010, Korea, 17 August 2010 - 20 August 2010, http://dx.doi.org/10.1109/NANO.2010.5698069
2010
Verduijn J; Lansbergen GP; Tettamanzi GC; Rahman R; Biesemans S; Colleart N; Klimeck G; L. Hollenberg LC; Rogge S, 2009, 'From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs', in Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics, presented at 2009 International Conference on Solid State Devices and Materials, 06 October 2009 - 09 October 2009, http://dx.doi.org/10.7567/ssdm.2009.k-1-1
2009
Lansbergen GP; Rahman R; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2009, '+Level spectrum of single gated as donors', in Caldas MJ; Studart N (eds.), AIP Conference Proceedings, AMER INST PHYSICS, Rio de Janeiro, BRAZIL, pp. 93 - 94, presented at 29th International Conference on Physics of Semiconductors, Rio de Janeiro, BRAZIL, 27 July - 01 August 2008, http://dx.doi.org/10.1063/1.3295570
2009
Lansbergen GP; Rahman R; Wellard CJ; Rutten PE; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Determination of the eigenstates and wavefunctions of a single gated As donor', in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, pp. 164 - 167, http://dx.doi.org/10.1109/ICONN.2008.4639272
2008
Lansbergen GP; Rahman R; Wellard CJ; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Transport-based dopant metrology in advanced FinFETs', in Technical Digest - International Electron Devices Meeting, IEDM, IEEE, San Francisco, CA, pp. 713 - +, presented at IEEE International Electron Devices Meeting, San Francisco, CA, 15 - 17 December 2008, http://dx.doi.org/10.1109/IEDM.2008.4796794
2008
Lansbergen P; Rahman R; Caro J; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Transport spectroscopy of a single atom in a FinFET', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/109/1/012003
2008
Ahmed S; Usman M; Heitzinger C; Rahman R; Schliwa A; Klimeck G, 2007, 'Symmetry breaking and fine structure splitting in zincblende quantum dots: Atomistic simulations of long-range strain and piezoelectric field', in AIP Conference Proceedings, pp. 849 - 850, http://dx.doi.org/10.1063/1.2730157
2007
Journal articles
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Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2021, 'Exchange Coupling in a Linear Chain of Three Quantum-Dot Spin Qubits in Silicon', Nano Letters, vol. 21, pp. 1517 - 1522, http://dx.doi.org/10.1021/acs.nanolett.0c04771
2021
Gyure MF; Kiselev AA; Ross RS; Rahman R; Van de Walle CG, 2021, 'Materials and device simulations for silicon qubit design and optimization', MRS Bulletin, vol. 46, pp. 634 - 641, http://dx.doi.org/10.1557/s43577-021-00140-1
2021
Voisin B; Salfi J; Rahman R; Rogge S, 2021, 'Novel characterization of dopant-based qubits', MRS Bulletin, vol. 46, pp. 616 - 622, http://dx.doi.org/10.1557/s43577-021-00136-x
2021
Mazzola F; Chen CY; Rahman R; Zhu XG; Polley CM; Balasubramanian T; King PDC; Hofmann P; Miwa JA; Wells JW, 2020, 'The sub-band structure of atomically sharp dopant profiles in silicon', npj Quantum Materials, vol. 5, http://dx.doi.org/10.1038/s41535-020-0237-1
2020
Sengupta P; Khandekar C; Van Mechelen T; Rahman R; Jacob Z, 2020, 'Electron g -factor engineering for nonreciprocal spin photonics', Physical Review B, vol. 101, http://dx.doi.org/10.1103/PhysRevB.101.035412
2020
Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, vol. 11, pp. 6124, http://dx.doi.org/10.1038/s41467-020-19835-1
2020
Nakamura J; Fallahi S; Sahasrabudhe H; Rahman R; Liang S; Gardner GC; Manfra MJ, 2019, 'Aharonov–Bohm interference of fractional quantum Hall edge modes', Nature Physics, vol. 15, pp. 563 - 569, http://dx.doi.org/10.1038/s41567-019-0441-8
2019
Ameen TA; Ilatikhameneh H; Fay P; Seabaugh A; Rahman R; Klimeck G, 2019, 'Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs', IEEE Transactions on Electron Devices, vol. 66, pp. 736 - 742, http://dx.doi.org/10.1109/TED.2018.2877753
2019
Pang CS; Chen CY; Ameen T; Zhang S; Ilatikhameneh H; Rahman R; Klimeck G; Chen Z, 2019, 'WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing', Small, vol. 15, http://dx.doi.org/10.1002/smll.201902770
2019
Wu P; Ameen T; Zhang H; Bendersky LA; Ilatikhameneh H; Klimeck G; Rahman R; Davydov AV; Appenzeller J, 2019, 'Complementary Black Phosphorus Tunneling Field-Effect Transistors', ACS Nano, vol. 13, pp. 377 - 385, http://dx.doi.org/10.1021/acsnano.8b06441
2019
Ferdous R; Kawakami E; Scarlino P; Nowak MP; Ward DR; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Eriksson MA; Vandersypen LMK; Rahman R, 2018, 'Valley dependent anisotropic spin splitting in silicon quantum dots', npj Quantum Information, vol. 4, http://dx.doi.org/10.1038/s41534-018-0075-1
2018
Chen CY; Ameen TA; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2018, 'Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs', IEEE Transactions on Electron Devices, vol. 65, pp. 4614 - 4621, http://dx.doi.org/10.1109/TED.2018.2862408
2018
Chen F; Ilatikhameneh H; Tan Y; Klimeck G; Rahman R, 2018, 'Switching Mechanism and the Scalability of Vertical-TFETs', IEEE Transactions on Electron Devices, vol. 65, pp. 3065 - 3068, http://dx.doi.org/10.1109/TED.2018.2831688
2018
Ilatikhameneh H; Ameen TA; Chen C; Klimeck G; Rahman R, 2018, 'Sensitivity Challenge of Steep Transistors', IEEE Transactions on Electron Devices, vol. 65, pp. 1633 - 1639, http://dx.doi.org/10.1109/TED.2018.2808040
2018
Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2018, 'Dramatic impact of dimensionality on the electrostatics of P-N junctions and its sensing and switching applications', IEEE Transactions on Nanotechnology, vol. 17, pp. 293 - 298, http://dx.doi.org/10.1109/TNANO.2018.2799960
2018
Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, 'Addressable electron spin resonance using donors and donor molecules in silicon', Science Advances, vol. 4, http://dx.doi.org/10.1126/sciadv.aaq1459
2018
Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2018, 'Spin–orbit coupling in silicon for electrons bound to donors', npj Quantum Information, vol. 4, http://dx.doi.org/10.1038/s41534-018-0111-1
2018
Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, vol. 97, http://dx.doi.org/10.1103/PhysRevB.97.195301
2018
Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, vol. 8, http://dx.doi.org/10.1103/PhysRevX.8.031049
2018
Sahasrabudhe H; Novakovic B; Nakamura J; Fallahi S; Povolotskyi M; Klimeck G; Rahman R; Manfra MJ, 2018, 'Optimization of edge state velocity in the integer quantum Hall regime', Physical Review B, vol. 97, http://dx.doi.org/10.1103/PhysRevB.97.085302
2018
Ferdous R; Chan KW; Veldhorst M; Hwang JCC; Yang CH; Sahasrabudhe H; Klimeck G; Morello A; Dzurak AS; Rahman R, 2018, 'Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability', Physical Review B, vol. 97, http://dx.doi.org/10.1103/PhysRevB.97.241401
2018
Ameen TA; Ilatikhameneh H; Tankasala A; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Rahman R; Klimeck G, 2018, 'Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot', Beilstein Journal of Nanotechnology, vol. 9, pp. 1075 - 1084, http://dx.doi.org/10.3762/bjnano.9.99
2018
Shekhar P; Pendharker S; Sahasrabudhe H; Vick D; Malac M; Rahman R; Jacob Z, 2018, 'Extreme ultraviolet plasmonics and Cherenkov radiation in silicon', Optica, vol. 5, pp. 1590 - 1596, http://dx.doi.org/10.1364/OPTICA.5.001590
2018
Ameen TA; Ilatikhameneh H; Huang JZ; Povolotskyi M; Rahman R; Klimeck G, 2017, 'Combination of Equilibrium and Nonequilibrium Carrier Statistics into an Atomistic Quantum Transport Model for Tunneling Heterojunctions', IEEE Transactions on Electron Devices, vol. 64, pp. 2512 - 2518, http://dx.doi.org/10.1109/TED.2017.2690626
2017
Watson TF; Weber B; Hsueh YL; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Atomically engineered electron spin lifetimes of 30 s in silicon', Science Advances, vol. 3, http://dx.doi.org/10.1126/sciadv.1602811
2017
Chen FW; Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2017, 'Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene', IEEE Electron Device Letters, vol. 38, pp. 130 - 133, http://dx.doi.org/10.1109/LED.2016.2627538
2017
Zheng C; Zhang Q; Weber B; Ilatikhameneh H; Chen F; Sahasrabudhe H; Rahman R; Li S; Chen Z; Hellerstedt J; Zhang Y; Duan WH; Bao Q; Fuhrer MS, 2017, 'Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures', ACS Nano, vol. 11, pp. 2785 - 2793, http://dx.doi.org/10.1021/acsnano.6b07832
2017
Huang JZ; Long P; Povolotskyi M; Ilatikhameneh H; Ameen TA; Rahman R; Rodwell MJW; Klimeck G, 2017, 'A Multiscale Modeling of Triple-Heterojunction Tunneling FETs', IEEE Transactions on Electron Devices, vol. 64, pp. 2728 - 2735, http://dx.doi.org/10.1109/TED.2017.2690669
2017
Ameen TA; Ilatikhameneh H; Klimeck G; Rahman R, 2016, 'Few-layer phosphorene: An ideal 2D material for tunnel transistors', Scientific Reports, vol. 6, http://dx.doi.org/10.1038/srep28515
2016
Ilatikhameneh H; Ameen T; Novakovic B; Tan Y; Klimeck G; Rahman R, 2016, 'Saving Moore's Law Down to 1 nm Channels with Anisotropic Effective Mass', Scientific Reports, vol. 6, http://dx.doi.org/10.1038/srep31501
2016
Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2016, 'Design rules for high performance tunnel transistors from 2-D materials', IEEE Journal of the Electron Devices Society, vol. 4, pp. 260 - 265, http://dx.doi.org/10.1109/JEDS.2016.2568219
2016
Wang Y; Chen CY; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques', Scientific Reports, vol. 6, http://dx.doi.org/10.1038/srep31830
2016
Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2016, 'Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots', IEEE Journal of Quantum Electronics, vol. 52, http://dx.doi.org/10.1109/JQE.2016.2573959
2016
Ilatikhameneh H; Klimeck G; Rahman R, 2016, 'Can Homojunction Tunnel FETs Scale below 10 nm?', IEEE Electron Device Letters, vol. 37, pp. 115 - 118, http://dx.doi.org/10.1109/LED.2015.2501820
2016
Mohiyaddin FA; Kalra R; Laucht A; Rahman R; Klimeck G; Morello A, 2016, 'Transport of spin qubits with donor chains under realistic experimental conditions', Physical Review B, vol. 94, http://dx.doi.org/10.1103/PhysRevB.94.045314
2016
Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, vol. 7, http://dx.doi.org/10.1038/ncomms11342
2016
Chen FW; Ilatikhameneh H; Klimeck G; Chen Z; Rahman R, 2016, 'Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET', IEEE Journal of the Electron Devices Society, vol. 4, pp. 124 - 128, http://dx.doi.org/10.1109/JEDS.2016.2539919
2016
Wang Y; Tankasala A; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2016, 'Highly tunable exchange in donor qubits in silicon', npj Quantum Information, vol. 2, http://dx.doi.org/10.1038/npjqi.2016.8
2016
Wang Y; Chen C-Y; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques (vol 6, 31830, 2016)', SCIENTIFIC REPORTS, vol. 6, http://dx.doi.org/10.1038/srep38120
2016
Ilatikhameneh H; Salazar RB; Klimeck G; Rahman R; Appenzeller J, 2016, 'From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling', IEEE Transactions on Electron Devices, vol. 63, pp. 2871 - 2878, http://dx.doi.org/10.1109/TED.2016.2565582
2016
Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, vol. 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83
2016
Li W; Sharmin S; Ilatikhameneh H; Rahman R; Lu Y; Wang J; Yan X; Seabaugh A; Klimeck G; Jena D; Fay P, 2015, 'Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors', IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 1, pp. 28 - 34, http://dx.doi.org/10.1109/JXCDC.2015.2426433
2015
Ilatikhameneh H; Tan Y; Novakovic B; Klimeck G; Rahman R; Appenzeller J, 2015, 'Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials', IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 1, pp. 12 - 18, http://dx.doi.org/10.1109/JXCDC.2015.2423096
2015
Chu T; Ilatikhameneh H; Klimeck G; Rahman R; Chen Z, 2015, 'Electrically Tunable Bandgaps in Bilayer MoS2', Nano Letters, vol. 15, pp. 8000 - 8007, http://dx.doi.org/10.1021/acs.nanolett.5b03218
2015
Salazar RB; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2015, 'A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations', Journal of Applied Physics, vol. 118, http://dx.doi.org/10.1063/1.4934682
2015
Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, vol. 91, http://dx.doi.org/10.1103/PhysRevB.91.245209
2015
Ilatikhameneh H; Ameen TA; Klimeck G; Appenzeller J; Rahman R, 2015, 'Dielectric Engineered Tunnel Field-Effect Transistor', IEEE Electron Device Letters, vol. 36, pp. 1097 - 1100, http://dx.doi.org/10.1109/LED.2015.2474147
2015
Laucht A; Muhonen J; Mohiyaddin F; Kalra R; Dehollain JP; Freer S; Hudson FE; Veldhorst M; Rahman R; Klimeck G; Itoh KM; Jamieson DN; McCallum JC; Dzurak A; Morello A, 2015, 'Electrically controlling single-spin qubits in a continuous microwave field', Science Advances, vol. 1, http://dx.doi.org/10.1126/sciadv.1500022
2015
Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2015, 'Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory', Journal of Physics Condensed Matter, vol. 27, http://dx.doi.org/10.1088/0953-8984/27/15/154207
2015
Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, 'Spatially resolved resonant tunneling on single atoms in silicon', Journal of Physics Condensed Matter, vol. 27, http://dx.doi.org/10.1088/0953-8984/27/15/154203
2015
Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2015, 'Scaling Theory of Electrically Doped 2D Transistors', IEEE Electron Device Letters, vol. 36, pp. 726 - 728, http://dx.doi.org/10.1109/LED.2015.2436356
2015
Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, vol. 106, http://dx.doi.org/10.1063/1.4921640
2015
Neupane MR; Rahman R; Lake RK, 2015, 'Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals', Physical Chemistry Chemical Physics, vol. 17, pp. 2484 - 2493, http://dx.doi.org/10.1039/c4cp03711a
2015
Tosi G; Mohiyaddin FA; Tenberg S; Rahman R; Klimeck G; Morello A, 2015, 'Silicon quantum processor with robust long-distance qubit couplings', arxiv, vol. 8, http://dx.doi.org/10.1038/s41467-017-00378-x
2015
Pla JJ; Mohiyaddin FA; Tan KY; Dehollain JP; Rahman R; Klimeck G; Jamieson DN; Dzurak AS; Morello A, 2014, 'Coherent control of a single Si 29 nuclear spin qubit', Physical Review Letters, vol. 113, http://dx.doi.org/10.1103/PhysRevLett.113.246801
2014
Weber B; Tan YHM; Mahapatra S; Watson TF; Ryu H; Rahman R; Hollenberg LCL; Klimeck G; Simmons MY, 2014, 'Spin blockade and exchange in Coulomb-confined silicon double quantum dots', Nature Nanotechnology, vol. 9, pp. 430 - 435, http://dx.doi.org/10.1038/nnano.2014.63
2014
Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2014, 'Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon', Physical Review Letters, vol. 113, http://dx.doi.org/10.1103/PhysRevLett.113.246406
2014
Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, vol. 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941
2014
Nguyen KT; Lilly MP; Nielsen E; Bishop N; Rahman R; Young R; Wendt J; Dominguez J; Pluym T; Stevens J; Lu TM; Muller R; Carroll MS, 2013, 'Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot', Nano Letters, vol. 13, pp. 5785 - 5790, http://dx.doi.org/10.1021/nl4020759
2013
Buch H; Mahapatra S; Rahman R; Morello A; Simmons MY, 2013, 'Spin readout and addressability of phosphorus-donor clusters in silicon', Nature communications, vol. 4, pp. Article number: 2017, http://dx.doi.org/10.1038/ncomms3017
2013
Tettamanzi G, 2013, 'Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade (vol 107, 136602, 2011)', Physical Review Letters, vol. 110, pp. 49901 - 049901, http://dx.doi.org/10.1103/PhysRevLett.110.049901
2013
Mohiyaddin FA; Rahman R; Kalra R; Klimeck ; Hollenberg ; Pla JJ; Dzurak AS; Morello A, 2013, 'Noninvasive spatial metrology of single-atom devices', Nano Letters, vol. 13, pp. 1903 - 1909, http://dx.doi.org/10.1021/nl303863s
2013
Nielsen E; Rahman R; Muller RP, 2012, 'A many-electron tight binding method for the analysis of quantum dot systems', Journal of Applied Physics, vol. 112, http://dx.doi.org/10.1063/1.4759256
2012
Neupane MR; Lake RK; Rahman R, 2012, 'Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores', Journal of Applied Physics, vol. 112, http://dx.doi.org/10.1063/1.4739715
2012
Witzel WM; Rahman R; Carroll MS, 2012, 'Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on 73Ge', Physical Review B - Condensed Matter and Materials Physics, vol. 85, http://dx.doi.org/10.1103/PhysRevB.85.205312
2012
Rahman R; Nielsen E; Muller RP; Carroll MS, 2012, 'Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric', Physical Review B - Condensed Matter and Materials Physics, vol. 85, http://dx.doi.org/10.1103/PhysRevB.85.125423
2012
Rahman R; Park SH; Klimeck G; Hollenberg LCL, 2011, 'Stark tuning of the charge states of a two-donor molecule in silicon', Nanotechnology, vol. 22, http://dx.doi.org/10.1088/0957-4484/22/22/225202
2011
Rahman ; Lansbergen ; Verduijn A; Tettamanzi G; Park ; Collaert ; Biesemans ; Klimeck ; Hollenberg ; Rogge S, 2011, 'Electric field reduced charging energies and two-electron bound excited states of single donors in silicon', Physical Review B, vol. 84, pp. 115458-1 - 115458-7, http://dx.doi.org/10.1103/PhysRevB.84.115428
2011
Rahman R; Verduijn JA; Kharche N; Lansbergen G; Klimeck ; Hollenberg ; Rogge S, 2011, 'Engineered valley-orbit splittings in quantum-confined nanostructures in silicon', Physical Review B, vol. 83, pp. 195323-1 - 195323-5, http://dx.doi.org/10.1103/PhysRevB.83.195323
2011
Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, 'Erratum: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon (Physical Review B - Condensed Matter and Materials Physics (2011) 83 (195323))', Physical Review B - Condensed Matter and Materials Physics, vol. 83, http://dx.doi.org/10.1103/PhysRevB.83.239904
2011
Neupane MR; Lake RK; Rahman R, 2011, 'Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals', Journal of Applied Physics, vol. 110, http://dx.doi.org/10.1063/1.3642970
2011
Lansbergen G; Rahman R; Verduijn A; Tettamanzi G; Collaert N; Biesemans S; Klimeck G; Rogge S; Hollenberg L, 2011, 'Lifetime-enhanced transport in silicon due to spin and valley blockade', Physical Review Letters, vol. 107, pp. 136602-1 - 136602-5, http://dx.doi.org/10.1103/PhysRevLett.107.136602
2011
Rahman R; Muller RP; Levy JE; Carroll MS; Klimeck G; Greentree AD; Hollenberg LCL, 2010, 'Coherent electron transport by adiabatic passage in an imperfect donor chain', Physical Review B - Condensed Matter and Materials Physics, vol. 82, http://dx.doi.org/10.1103/PhysRevB.82.155315
2010
Rahman R; Park SH; Cole JH; Greentree AD; Muller RP; Klimeck G; Hollenberg LCL, 2009, 'Atomistic simulations of adiabatic coherent electron transport in triple donor systems', Physical Review B - Condensed Matter and Materials Physics, vol. 80, http://dx.doi.org/10.1103/PhysRevB.80.035302
2009
Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg L, 2009, 'Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors', Physical Review - Section B - Condensed Matter, vol. 80, pp. 155301-1 - 155301-5, http://dx.doi.org/10.1103/PhysRevB.80.155301
2009
Rahman R; Lansbergen G; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg L, 2009, 'Orbital Stark effect and quantum confinement transition of donors in silicon', Physical Review - Section B - Condensed Matter, vol. 80, pp. 165314-1 - 165314-10, http://dx.doi.org/10.1103/PhysRevB.80.165314
2009
Park SH; Rahman R; Klimeck G; Hollenberg LCL, 2009, 'Mapping donor electron wave function deformations at a sub-bohr orbit resolution', Physical Review Letters, vol. 103, http://dx.doi.org/10.1103/PhysRevLett.103.106802
2009
Lansbergen G; Rahman R; Wellard C; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Atomistic understanding of a single gated dopant atom in a MOSFET', Materials Research Society Symposium Proceedings, vol. 1067, pp. 12 - 17, http://dx.doi.org/10.1557/proc-1067-b03-07
2008
Lansbergen G; Rahman R; Wellard CJ; Woo I; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET', Nature Physics, vol. 4, pp. 656 - 661, http://dx.doi.org/10.1038/nphys994
2008
Lansbergen GP; Rahman R; Wellard CJ; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Level spectrum of a single gated arsenic donor in a three terminal geometry', Materials Research Society Symposium Proceedings, vol. 1117, pp. 1 - 6, http://dx.doi.org/10.1557/proc-1117-j01-03
2008
Naumov M; Lee S; Haley B; Bae H; Clark S; Rahman R; Ryu H; Saied F; Klimeck G, 2008, 'Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D', Journal of Computational Electronics, vol. 7, pp. 297 - 300, http://dx.doi.org/10.1007/s10825-008-0223-5
2008
Rahman R; Wellard CJ; Bradbury FR; Prada M; Cole JH; Klimeck G; Hollenberg LCL, 2007, 'High precision quantum control of single donor spins in silicon', Physical Review Letters, vol. 99, http://dx.doi.org/10.1103/PhysRevLett.99.036403
2007
Klimeck G; Ahmed SS; Bae H; Clark S; Haley B; Lee S; Naumov M; Ryu H; Saied F; Prada M; Korkusinski M; Boykin TB; Rahman R, 2007, 'Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks', IEEE Transactions on Electron Devices, vol. 54, pp. 2079 - 2089, http://dx.doi.org/10.1109/TED.2007.902879
2007
  • “Enlightening single rare-earth atoms in scanning tunneling microscopy”, ARC Discovery Project 2021,  (1/12021-31/12/2024).
  • “Engineering giant momentum asymmetry of quantum vacuum”, US DARPA, Dec 2020-Dec2021.
  • “Accelerated donor device development through atomistic modeling”, Silicon Quantum Computing Pty. Ltd. (May 2020-May 2024).
  • “Donor based quantum computing in silicon”, US Army Research Office, Jan 2017-May 2021.
  • “Designing quantum fluctuational meta-molecules for giant co-operative light-matter interaction beyond spectral boundaries”, US DARPA, Aug 2018-Feb 2020. 

Semiconductor quantum computing, Condensed matter physics, Nanoelectronics, Quantum Material & Device Simulation, 2D Materials

First Year Physics 1121/1131

Experimental and Computational Physics 3112

First Year Lab Director